Low Interface Trapped Charge Density for AlO/β-GaO (001) Metal-Insulator-Semiconductor Capacitor<sub /> <sub /> <sub /> <sub />

In this letter, high-performance Al2O3/β-Ga2O3 (001) metal-insulator-semiconductor (MIS) capacitor has been demonstrated. The capacitance-voltage (C.V) curves of the MIS remain stable under different measurement frequencies. leakage current density is lower than 2.0 × 10-8 A/cm2 when gate voltage in range –5 13 V. fixed charge and trapped densities Al2O3 film are 4.4 1012 6.0 1011 cm-2, respectively. Average minimum interface (Dit) for extracted to be as low 3.3 2.3 cm-2 eV-1 via Terman method, Dit probably attributed modification vacancy defects introduction hydroxyl groups at after piranha solution pretreatment β-Ga2O3.